Solid-State-Drive/AORUS-RGB-M2-NVMe-SSD-512GB

R2,315.00

  • Form Factor: PCl Express Card
  • Interface: PCI-Express 3.0 x4, NVMe 1.3
  • Total Capacity: 512GB*
  • Sequential Read Speed : up to 3480 MB/s*
  • Sequential Write speed : up to 2100 MB/s*
  • TRIM & S.M.A.R.T supported
  • AES 256-bit Hardware Encryption Self-Encrypting Drive (SED)
  • Warranty: Limited 5-years

*Note: 1GB = 1 billion bytes. Actual useable capacity may vary.
**Speeds based on internal testing. Actual performance may vary.

SKU: GP-SSDRGB512 Categories: , Tags: , ,

Description

Description

Form Factor: M.2 2280
Interface: PCI-Express 3.0 x4, NVMe 1.3
Total Capacity: 512GB*
Warranty: Limited 5-years
Sequential Read Speed : up to 3480 MB/s**
Sequential Write speed : up to 2000 MB/s**
TRIM & S.M.A.R.T supported
AES 256 supported

Interface: PCI-Express 3.0 x4, NVMe 1.3
Form Factor: M.2 2280
Warranty: Limited 5-years or 800TBW
NAND: 3D TLC ToshiBa BiCS3
External DDR Cache: 512MB
Sequential Read speed: Up to 3480 MB/s
Sequential Write speed: Up to 2000 MB/s
Random Read IOPS: up to 360K
Random Write IOPS: up to 440K
Mean time between failure (MTBF): 1.8 million hours
Power Consumption (Active): Average : R : 5485mW ; W : 4085mW
Power Consumption (Idle): 272mW
Temperature (Operating): 0°C to 70°C
Temperature (Storage): -40°C to 85°C

Note
* Test system configuration: configuration may vary by models, we will choose the latest platform for verification.
* Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark v.5.1.2 and I0meter 1.1.0.
* Speeds based on internal testing. Actual performance may vary.
* TBW (Terabyte Written):Terabytes Written” is the total amount of data that can be written into an SSD before it is likely to fail.
* 1GB = 1 billion bytes. Actual useable capacity may vary.
* 5 years or 800 TBW, whichever comes first.

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